BSZ165N04NSG

BSZ165N04NSGATMA1 vs BSZ165N04NSG

 
PartNumberBSZ165N04NSGATMA1BSZ165N04NSG
DescriptionMOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
ManufacturerInfineon-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTSDSON-8-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage40 V-
Id Continuous Drain Current31 A-
Rds On Drain Source Resistance13.8 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge10 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation25 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameOptiMOS-
PackagingReel-
Height1.1 mm-
Length3.3 mm-
SeriesOptiMOS 3-
Transistor Type1 N-Channel-
Width3.3 mm-
BrandInfineon Technologies-
Forward Transconductance Min12 S-
Fall Time2.2 ns-
Product TypeMOSFET-
Rise Time1 ns-
Factory Pack Quantity5000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time6.8 ns-
Typical Turn On Delay Time5.4 ns-
Part # AliasesBSZ165N04NS BSZ165N4NSGXT G SP000391523-
Unit Weight0.023210 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ165N04NSGATMA1 MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3
BSZ165N04NSGATMA1 MOSFET N-CH 40V 31A TSDSON-8
BSZ165N04NSG New and Original
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