 | |  | |
| PartNumber | BSZ180P03NS3E G | BSZ180P03NS3EGATMA1 | BSZ180P03NS3EG |
| Description | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | Transistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G) |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 39.6 A | 39.6 A | - |
| Rds On Drain Source Resistance | 13.5 mOhms | 13.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | 3.1 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 30 nC | 30 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 40 W | 40 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS P3 | BSZ180P03 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 18 S | 18 S | - |
| Fall Time | 3 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | BSZ180P03NS3EGATMA1 BSZ18P3NS3EGXT SP000709740 | BSZ180P03NS3E BSZ18P3NS3EGXT G SP000709740 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ180P03NS3E G | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
| BSZ180P03NS3EGATMA1 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | ||
| BSZ180P03NS3EGATMA1 | MOSFET P-CH 30V 39.6A TSDSON-8 | ||
| BSZ180P03NS3E G | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | ||
| BSZ180P03NS3EG | Transistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G) |