BTS282ZE31

BTS282ZE3180A vs BTS282ZE3180A/BTS282ZE3 vs BTS282ZE3180AATMA1

 
PartNumberBTS282ZE3180ABTS282ZE3180A/BTS282ZE3BTS282ZE3180AATMA1
DescriptionPower Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETPower Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineon Technologies--
Product CategoryTransistors - FETs, MOSFETs - Single--
SeriesBTS282--
PackagingReel--
Part AliasesBTS282Z E3180A SP000910848--
Unit Weight0.056438 oz--
Mounting StyleSMD/SMT--
Package CaseTO-263-7--
TechnologySi--
Number of Channels1 Channel--
ConfigurationSingle--
Transistor Type1 N-Channel--
Pd Power Dissipation300 W--
Maximum Operating Temperature+ 175 C--
Minimum Operating Temperature- 40 C--
Fall Time36 ns--
Rise Time37 ns--
Vgs Gate Source Voltage20 V--
Id Continuous Drain Current36 A--
Vds Drain Source Breakdown Voltage49 V--
Vgs th Gate Source Threshold Voltage1.6 V--
Rds On Drain Source Resistance6.5 mOhms--
Transistor PolarityN-Channel--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time30 ns--
Qg Gate Charge155 nC--
Forward Transconductance Min30 S--
Channel ModeEnhancement--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BTS282ZE3180AATMA2 MOSFET N-Ch 49V 36A D2PAK-6
BTS282ZE3180AATMA2 MOSFET N-Ch 49V 36A D2PAK-6
BTS282ZE3180A Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS282ZE3180A/BTS282ZE3 New and Original
BTS282ZE3180AATMA1 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS282ZE3180ANTMA1 - Bulk (Alt: BTS282ZE3180ANTMA1)
BTS282ZE3180AXT MOSFET N-Ch 49V 80A TO220-7
BTS282ZE3180AATMA2-CUT TAPE New and Original
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