BTS282ZE32

BTS282ZE3230AKSA2 vs BTS282ZE3230 vs BTS282ZE3230-ND

 
PartNumberBTS282ZE3230AKSA2BTS282ZE3230BTS282ZE3230-ND
DescriptionMOSFET TEMPFETPower Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage49 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance5.8 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge232 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingTube--
Height15.65 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time37 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time30 ns--
Part # AliasesBTS282Z E3230 SP000969786--
Unit Weight0.070548 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BTS282ZE3230AKSA2 MOSFET TEMPFET
BTS282ZE3230AKSA2 MOSFET N-CH 49V 80A TO220-7
BTS282ZE3230 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS282ZE3230-ND New and Original
BTS282ZE3230AKSA2-CUT TAPE New and Original
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