PartNumber | CG2H80015D-GP4 | CG2H80060D-GP4 | CG2H80030D-GP4 |
Description | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 15 Watt | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 60 Watt | RF JFET Transistors GaN HEMT Die DC-8.0GHz, 30 Watt |
Manufacturer | Cree, Inc. | Cree, Inc. | Cree, Inc. |
Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | HEMT | HEMT | HEMT |
Technology | GaN | GaN | GaN |
Gain | 15 dB | 15 dB | 17 dB |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 120 V | 120 V | 100 V |
Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - 10 V, 2 V | - 10 V to 2 V |
Id Continuous Drain Current | 3 A | 3 A | 0.8 A |
Output Power | 25 W | 25 W | 6 W |
Maximum Drain Gate Voltage | - | - | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | - | - | - |
Mounting Style | Screw Mount | Screw Mount | SMD/SMT |
Package / Case | 440166 | 440166 | Die |
Packaging | Tray | Tray | Gel Pack |
Operating Frequency | DC to 6 GHz | DC to 6 GHz | 10 MHz to 18 GHz |
Brand | Wolfspeed / Cree | Wolfspeed / Cree | Wolfspeed / Cree |
Forward Transconductance Min | - | - | - |
Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
Factory Pack Quantity | 250 | 250 | 10 |
Subcategory | Transistors | Transistors | Transistors |
Vgs th Gate Source Threshold Voltage | - 3.8 V | - 3.8 V | - 3 V |
Application | - | - | - |
Configuration | - | - | Single |
Height | - | - | 100 um |
Length | - | - | 840 um |
Operating Temperature Range | - | - | - |
Product | - | - | GaN HEMT |
Width | - | - | 800 um |
Gate Source Cutoff Voltage | - | - | - |
Class | - | - | - |
Development Kit | - | - | - |
Fall Time | - | - | - |
NF Noise Figure | - | - | - |
P1dB Compression Point | - | - | - |
Rds On Drain Source Resistance | - | - | 2.3 Ohms |
Rise Time | - | - | - |
Typical Turn Off Delay Time | - | - | - |