CGH40010F

CGH40010F vs CGH40010F-TB

 
PartNumberCGH40010FCGH40010F-TB
DescriptionRF JFET Transistors GaN HEMT DC-6.0GHz, 10 WattRF Development Tools Test Board without GaN HEMT
ManufacturerCree, Inc.Cree, Inc.
Product CategoryRF JFET TransistorsRF Development Tools
RoHSYN
Transistor TypeHEMT-
TechnologyGaN-
Gain14.5 dB-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage120 V-
Vgs Gate Source Breakdown Voltage- 10 V to 2 V-
Id Continuous Drain Current1.5 A-
Output Power12.5 W-
Maximum Drain Gate Voltage--
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation--
Mounting StyleScrew Mount-
Package / Case440166-
PackagingTubeBulk
Application--
ConfigurationSingle-
Height3.43 mm-
Length5.21 mm-
Operating Frequency2 GHz to 6 GHz-
Operating Temperature Range--
ProductGaN HEMTDemonstration Boards
Width4.19 mm-
BrandWolfspeed / CreeWolfspeed / Cree
Forward Transconductance Min--
Gate Source Cutoff Voltage--
Class--
Development KitCGH40010-TB-
Fall Time--
NF Noise Figure--
P1dB Compression Point--
Product TypeRF JFET TransistorsRF Development Tools
Rds On Drain Source Resistance--
Rise Time--
Factory Pack Quantity2502
SubcategoryTransistorsDevelopment Tools
Typical Turn Off Delay Time--
Vgs th Gate Source Threshold Voltage- 3 V-
Type-RF Transistors
Tool Is For Evaluation Of-CGH40010F
Frequency-6 GHz
Operating Supply Voltage-28 V
Description/Function-Demonstration board for CGH40010F
Dimensions--
Interface Type--
For Use With-CGH40010F
Manufacturer Part # Description RFQ
N/A
N/A
CGH40010F RF JFET Transistors GaN HEMT DC-6.0GHz, 10 Watt
CGH40010F-TB RF Development Tools Test Board without GaN HEMT
CGH40010F-TB BOARD DEMO AMP CIRCUIT CGH40010
CGH40010F RF JFET Transistors DC-6GHz 28V 10W Gain 14.5dB GaN HEMT
CGH40010F/P New and Original
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