CGH40035

CGH40035F vs CGH40035F-TB

 
PartNumberCGH40035FCGH40035F-TB
DescriptionRF JFET Transistors GaN HEMT DC-4.0GHz, 35 WattRF Development Tools Test Board without GaN HEMT
ManufacturerCree, Inc.Cree, Inc.
Product CategoryRF JFET TransistorsRF Development Tools
RoHSYN
Transistor TypeHEMT-
TechnologyGaN-
Gain15 dB-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage120 V-
Vgs Gate Source Breakdown Voltage- 10 V to 2 V-
Id Continuous Drain Current4.5 A-
Output Power45 W-
Maximum Drain Gate Voltage--
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation--
Mounting StyleScrew Mount-
Package / Case440193-
PackagingTrayBulk
Application--
ConfigurationSingle-
Height4.19 mm-
Length20.46 mm-
Operating Frequency2 GHz to 4 GHz-
Operating Temperature Range--
ProductGaN HEMTDemonstration Boards
Width5.97 mm-
BrandWolfspeed / CreeWolfspeed / Cree
Forward Transconductance Min--
Gate Source Cutoff Voltage--
Class--
Development KitCGH40035F-TB-
Fall Time--
NF Noise Figure--
P1dB Compression Point--
Product TypeRF JFET TransistorsRF Development Tools
Rds On Drain Source Resistance--
Rise Time--
Factory Pack Quantity1202
SubcategoryTransistorsDevelopment Tools
Typical Turn Off Delay Time--
Vgs th Gate Source Threshold Voltage- 3 V-
Type-RF Transistors
Tool Is For Evaluation Of-CGH40035F
Frequency-4 GHz
Operating Supply Voltage-28 V
Description/Function-Demonstration board for CGH40035F
Dimensions--
Interface Type--
For Use With-CGH40035F
Manufacturer Part # Description RFQ
N/A
N/A
CGH40035F RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt
CGH40035F-TB RF Development Tools Test Board without GaN HEMT
CGH40035F-TB BOARD DEMO AMP CIRCUIT CGH40035
CGH40035F RF JFET Transistors DC-6GHz 28V 35W Gain 14dB GaN HEMT
CGH40035F/P New and Original
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