 |  | | |
| PartNumber | CGH55015F2 | CGH55015F2/P1 | CGH55015F2/P2 |
| Description | RF JFET Transistors GaN HEMT 4.5-6.0GHz, 10 Watt | ||
| Manufacturer | Cree, Inc. | - | - |
| Product Category | RF JFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | HEMT | - | - |
| Technology | GaN | - | - |
| Gain | 12 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Output Power | 10 W | - | - |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | - | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | 440166 | - | - |
| Packaging | Tray | - | - |
| Application | - | - | - |
| Configuration | Single | - | - |
| Height | 3.43 mm | - | - |
| Length | 14.09 mm | - | - |
| Operating Frequency | 4.5 GHz to 6 GHz | - | - |
| Operating Temperature Range | - | - | - |
| Product | GaN HEMT | - | - |
| Width | 4.19 mm | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Forward Transconductance Min | - | - | - |
| Gate Source Cutoff Voltage | - | - | - |
| Class | - | - | - |
| Fall Time | - | - | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| Product Type | RF JFET Transistors | - | - |
| Rds On Drain Source Resistance | - | - | - |
| Rise Time | - | - | - |
| Factory Pack Quantity | 60 | - | - |
| Subcategory | Transistors | - | - |
| Typical Turn Off Delay Time | - | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - | - |
| Unit Weight | 0.017637 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
CGH55015F2 | RF JFET Transistors GaN HEMT 4.5-6.0GHz, 10 Watt | |
| CGH55015F2 | RF JFET Transistors 4.5-6GHz 13Watt GaN Sm. Sig. Gain 12dB | ||
| CGH55015F2/P1 | New and Original | ||
| CGH55015F2/P2 | New and Original |