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| PartNumber | CGHV1J070D-GP4 | CGHV1J006D-GP4 | CGHV1J025D-GP4 |
| Description | RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt | RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt | RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt |
| Manufacturer | Cree, Inc. | Cree, Inc. | Qorvo |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN | GaN | GaN SiC |
| Gain | 15 dB | 17 dB | 20 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | 100 V | 50 V |
| Vgs Gate Source Breakdown Voltage | - 10 V to 2 V | - 10 V to 2 V | 145 V |
| Id Continuous Drain Current | 4.5 A | 0.8 A | 2.5 A |
| Output Power | 45 W | 6 W | 70 W |
| Maximum Drain Gate Voltage | - | - | - |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Maximum Operating Temperature | + 150 C | - | + 85 C |
| Pd Power Dissipation | - | - | 64 W |
| Mounting Style | Screw Mount | SMD/SMT | Screw Mount |
| Package / Case | 440193 | Die | NI-360 |
| Packaging | Tray | Gel Pack | Tray |
| Application | - | - | - |
| Configuration | Single | Single | Single |
| Height | 4.19 mm | 100 um | - |
| Length | 20.46 mm | 840 um | - |
| Operating Frequency | 2 GHz to 4 GHz | 10 MHz to 18 GHz | 3.7 GHz |
| Operating Temperature Range | - | - | - 40 C to + 85 C |
| Product | GaN HEMT | GaN HEMT | - |
| Width | 5.97 mm | 800 um | - |
| Brand | Wolfspeed / Cree | Wolfspeed / Cree | Qorvo |
| Forward Transconductance Min | - | - | - |
| Gate Source Cutoff Voltage | - | - | - |
| Class | - | - | - |
| Development Kit | CGH40035F-TB | - | QPD1015LPCB401 |
| Fall Time | - | - | - |
| NF Noise Figure | - | - | - |
| P1dB Compression Point | - | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Rds On Drain Source Resistance | - | 2.3 Ohms | - |
| Rise Time | - | - | - |
| Factory Pack Quantity | 120 | 10 | 25 |
| Subcategory | Transistors | Transistors | Transistors |
| Typical Turn Off Delay Time | - | - | - |
| Vgs th Gate Source Threshold Voltage | - 3 V | - 3 V | - 2.8 V |
| Series | - | - | QPD |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
CGHV1J070D-GP4 | RF JFET Transistors GaN HEMT Die DC-18GHz, 70 Watt | |
| CGHV1J006D-GP4 | RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt | ||
| CGHV1J025D-GP4 | RF JFET Transistors GaN HEMT Die DC-18GHz, 25 Watt | ||
| CGHV1J006D-GP4 | RF MOSFET HEMT 40V DIE | ||
| CGHV1J025D-GP4 | RF POWER TRANSISTOR | ||
| CGHV1J070D-GP4 | RF POWER TRANSISTOR | ||
| CGHV1J025 | New and Original | ||
| CGHV1J006D | RF JFET Transistors DC-18GHz 6W GaN Gain@10GHz 17dB | ||
| CGHV1J025D | RF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB | ||
| CGHV1J070D | RF JFET Transistors DC-18GHz 70 Watts Gain 17dB @10GHz |