CSD17302

CSD17302Q5A vs CSD17302 vs CSD17302Q5AE3

 
PartNumberCSD17302Q5ACSD17302CSD17302Q5AE3
DescriptionMOSFET 30V N Channel NexFET Power MOSFET
ManufacturerTexas InstrumentsTI-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseVSONP-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance9 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge5.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3 W--
ConfigurationSingleSingle-
TradenameNexFETNexFET-
PackagingReelReel-
Height1 mm--
Length6 mm--
SeriesCSD17302Q5ACSD17302Q5A-
Transistor Type1 N-Channel1 N-Channel-
Width4.9 mm--
BrandTexas Instruments--
Forward Transconductance Min68 S--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10.6 ns10.6 ns-
Typical Turn On Delay Time5.2 ns5.2 ns-
Package Case-VSON-FET-8-
Pd Power Dissipation-3 W-
Vgs Gate Source Voltage-10 V-
Id Continuous Drain Current-16 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.2 V-
Rds On Drain Source Resistance-9 mOhms-
Qg Gate Charge-5.4 nC-
Forward Transconductance Min-68 S-
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD17302Q5A MOSFET 30V N Channel NexFET Power MOSFET
CSD17302 New and Original
CSD17302Q5AE3 New and Original
CSD17302Q5A RF Bipolar Transistors MOSFET 30V N Channel NexFET Power MOSFET
Top