CSD17556

CSD17556Q5B vs CSD17556 vs CSD17556Q5

 
PartNumberCSD17556Q5BCSD17556CSD17556Q5
DescriptionMOSFET 30V N-Ch NexFET Power MOSFETs
ManufacturerTexas InstrumentsTITI
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSE--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseVSON-Clip-8--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.5 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge28.5 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation3.1 W--
ConfigurationSingleSingleSingle
TradenameNexFETNexFETNexFET
PackagingReelReelReel
Height1 mm--
Length6 mm--
SeriesCSD17556Q5BCSD17556Q5BCSD17556Q5B
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5 mm--
BrandTexas Instruments--
Forward Transconductance Min197 S--
Fall Time12 ns12 ns12 ns
Product TypeMOSFET--
Rise Time26 ns26 ns26 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns27 ns27 ns
Typical Turn On Delay Time14 ns14 ns14 ns
Unit Weight0.004751 oz--
Package Case-VSON-Clip-8VSON-Clip-8
Pd Power Dissipation-3.1 W3.1 W
Vgs Gate Source Voltage-20 V20 V
Id Continuous Drain Current-218 A218 A
Vds Drain Source Breakdown Voltage-30 V30 V
Vgs th Gate Source Threshold Voltage-1.4 V1.4 V
Rds On Drain Source Resistance-1.8 mOhms1.8 mOhms
Qg Gate Charge-28.5 nC28.5 nC
Forward Transconductance Min-197 S197 S
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD17556Q5B MOSFET 30V N-Ch NexFET Power MOSFETs
CSD17556 New and Original
CSD17556Q5 New and Original
CSD17556Q5B/CSD16321 New and Original
CSD17556Q5BT MOSFET N-CH 30V 100A 8VSON
CSD17556Q5B MOSFET N-CH 30V 8-VSON
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