PartNumber | CSD19536KTT | CSD19536KCS | CSD19536 |
Description | MOSFET 100V, N ch NexFET MOSFETG , single D2PAK, 2.4mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 100V N-CH NexFET Pwr MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-263-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 272 A | 259 A | - |
Rds On Drain Source Resistance | 2.4 mOhms | 2.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 118 nC | 118 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 375 W | 375 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Tube | - |
Height | 4.7 mm | 16.51 mm | - |
Length | 9.25 mm | 10.67 mm | - |
Series | CSD19536KTT | CSD19536KCS | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 10.26 mm | 4.7 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Forward Transconductance Min | 329 S | 307 S | - |
Fall Time | 6 ns | 5 ns | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 8 ns | 8 ns | - |
Factory Pack Quantity | 500 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 32 ns | 38 ns | - |
Typical Turn On Delay Time | 13 ns | 14 ns | - |
Unit Weight | 0.077603 oz | 0.211644 oz | - |