 |  | | |
| PartNumber | DMG1026UV-7 | DMG1026UV-7-F | DMG1026UV-7-CUT TAPE |
| Description | MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 440 mA | - | - |
| Rds On Drain Source Resistance | 1.8 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 0.45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 580 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMG1026 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 16.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.4 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.4 ns | - | - |
| Typical Turn On Delay Time | 3.4 ns | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG1026UV-7 | MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K | |
| DMG1026UV-7-F | New and Original | ||
| DMG1026UV-7-CUT TAPE | New and Original | ||
| DMG1026UV-7 | Darlington Transistors MOSFET MOSFET BVDSS: 41V-60 1V-60V,SOT563,3K |