DMG1029

DMG1029SVQ-7 vs DMG1029SV-7 vs DMG1029SV-7-CUT TAPE

 
PartNumberDMG1029SVQ-7DMG1029SV-7DMG1029SV-7-CUT TAPE
DescriptionMOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3KMOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-563-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current500 mA, - 360 mA500 mA, 360 mA-
Rds On Drain Source Resistance1.7 Ohms, 4 Ohms1.7 Ohms, 4 Ohms-
Vgs th Gate Source Threshold Voltage1 V, - 3 V1 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge0.3 nC, 0.28 nC0.3 nC, 0.28 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W450 mW-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min80 mS, 50 mS80 mS, 50 mS-
Fall Time9.9 ns, 11.6 ns9.9 ns, 11.6 ns-
Product TypeMOSFETMOSFET-
Rise Time3.4 ns, 7.9 ns3.4 ns, 7.9 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.7 ns, 10.6 ns15.7 ns, 10.6 ns-
Typical Turn On Delay Time3.9 ns, 5.5 ns3.9 ns, 5.5 ns-
Unit Weight0.000952 oz0.000106 oz-
Series-DMG1029-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMG1029SVQ-7 MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K
DMG1029SV-7 MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
DMG1029SVQ-7 Trans MOSFET N/P-CH 60V 0.5A/0.36A 6-Pin SOT-563 T/R - Tape and Reel (Alt: DMG1029SVQ-7)
DMG1029SV-7-CUT TAPE New and Original
DMG1029SV-7 Trans MOSFET N/P-CH 60V 0.36A Automotive 6-Pin SOT-563 T/R
Top