PartNumber | DMG1029SVQ-7 | DMG1029SV-7 | DMG1029SV-7-CUT TAPE |
Description | MOSFET MOSFET BVDSS: 41V~60V SOT563 T&R 3K | MOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-563-6 | SOT-563-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 500 mA, - 360 mA | 500 mA, 360 mA | - |
Rds On Drain Source Resistance | 1.7 Ohms, 4 Ohms | 1.7 Ohms, 4 Ohms | - |
Vgs th Gate Source Threshold Voltage | 1 V, - 3 V | 1 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 0.3 nC, 0.28 nC | 0.3 nC, 0.28 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1 W | 450 mW | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 80 mS, 50 mS | 80 mS, 50 mS | - |
Fall Time | 9.9 ns, 11.6 ns | 9.9 ns, 11.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.4 ns, 7.9 ns | 3.4 ns, 7.9 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 15.7 ns, 10.6 ns | 15.7 ns, 10.6 ns | - |
Typical Turn On Delay Time | 3.9 ns, 5.5 ns | 3.9 ns, 5.5 ns | - |
Unit Weight | 0.000952 oz | 0.000106 oz | - |
Series | - | DMG1029 | - |