DMG6602SVT

DMG6602SVT-7 vs DMG6602SVT vs DMG6602SVT-7,2SK1764KYTR

 
PartNumberDMG6602SVT-7DMG6602SVTDMG6602SVT-7,2SK1764KYTR
DescriptionMOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3KMOSFET, NP CHANNEL, COM PAIR, 30V, TSOT23, Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.038ohm, Rds(on) Test Voltag
ManufacturerDiodes IncorporatedZ-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOT-26-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.4 A, 2.8 A--
Rds On Drain Source Resistance100 mOhms, 140 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation840 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
SeriesDMG6602--
Transistor Type1 N-Channel, 1 P-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min4 S--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time3 ns--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMG6602SVTX-7 MOSFET MOSFET BVDSS: 25V-30V
DMG6602SVTQ-7 MOSFET 30V Vds 20V Vgs Complmtry Enh FET
DMG6602SVT-7 MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
DMG6602SVT MOSFET, NP CHANNEL, COM PAIR, 30V, TSOT23, Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.038ohm, Rds(on) Test Voltag
DMG6602SVT-7 New and Original
DMG6602SVT-7,2SK1764KYTR New and Original
DMG6602SVT-7-F New and Original
DMG6602SVT-7-TW New and Original
DMG6602SVTX New and Original
DMG6602SVTX-7 MOSFET BVDSS: 25V-30V TSOT26 T&R
DMG6602SVT-7-CUT TAPE New and Original
DMG6602SVTQ-7 IGBT Transistors MOSFET 30V Vds 20V Vgs Complmtry Enh FET
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