PartNumber | DMG6602SVT-7 | DMG6602SVT | DMG6602SVT-7,2SK1764KYTR |
Description | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | MOSFET, NP CHANNEL, COM PAIR, 30V, TSOT23, Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.038ohm, Rds(on) Test Voltag | |
Manufacturer | Diodes Incorporated | Z | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSOT-26-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 3.4 A, 2.8 A | - | - |
Rds On Drain Source Resistance | 100 mOhms, 140 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 9 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 840 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Series | DMG6602 | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 4 S | - | - |
Fall Time | 3 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 5 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns | - | - |
Typical Turn On Delay Time | 3 ns | - | - |