DMJ70

DMJ70H1D3SJ3 vs DMJ70H1D0SV3 vs DMJ70H1D3SI3

 
PartNumberDMJ70H1D3SJ3DMJ70H1D0SV3DMJ70H1D3SI3
DescriptionMOSFET MOSFET BVDSSMOSFET MOSFETBVDSS: 651V-800VMOSFET 700V N-Ch Enh FET 1.3Ohm 10Vgs 4.6A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleSMD/SMT
Package / CaseTO-251-3TO-251-3TO-252-3
PackagingTube-Tube
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity757575
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.011993 oz0.011640 oz0.011993 oz
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-700 V-
Id Continuous Drain Current-6 A-
Rds On Drain Source Resistance-900 mOhms-
Vgs th Gate Source Threshold Voltage-2 V-
Vgs Gate Source Voltage-30 V-
Qg Gate Charge-12.8 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-104 W-
Configuration-Single-
Channel Mode-Enhancement-
Transistor Type-1 N-Channel-
Fall Time-3 ns-
Rise Time-14 ns-
Typical Turn Off Delay Time-23 ns-
Typical Turn On Delay Time-8 ns-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMJ70H1D3SJ3 MOSFET MOSFET BVDSS
DMJ70H600SH3 MOSFET MOSFETBVDSS: 651V-800V
DMJ70H1D0SV3 MOSFET MOSFETBVDSS: 651V-800V
DMJ70H1D3SI3 MOSFET 700V N-Ch Enh FET 1.3Ohm 10Vgs 4.6A
DMJ70H900HJ3 MOSFET MOSFET BVDSS 651V-800V
DMJ70H1D0SV3 MOSFET N-CHANNEL 700V 6A TO251
DMJ70H1D3SH New and Original
DMJ70H1D3SI3 MOSFET N-CH 700V 4.6A TO251
DMJ70H1D4SV3 MOSFET N-CHANNEL 700V 5A TO251
DMJ70H600SH3 MOSFET BVDSS: 651V800V TO251 TUBE 75PCS
DMJ70H601SK3 New and Original
DMJ70H601SV3 MOSFET N-CHANNEL 700V 8A TO251
DMJ70H900HJ3 MOSFET BVDSS: 651V 800V TO251
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