PartNumber | DMJ70H1D0SV3 | DMJ70H1D3SI3 | DMJ70H1D3SH |
Description | MOSFET MOSFETBVDSS: 651V-800V | MOSFET 700V N-Ch Enh FET 1.3Ohm 10Vgs 4.6A | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | TO-251-3 | TO-252-3 | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 700 V | - | - |
Id Continuous Drain Current | 6 A | - | - |
Rds On Drain Source Resistance | 900 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 12.8 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 104 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 3 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 14 ns | - | - |
Factory Pack Quantity | 75 | 75 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 23 ns | - | - |
Typical Turn On Delay Time | 8 ns | - | - |
Unit Weight | 0.011640 oz | 0.011993 oz | - |
Packaging | - | Tube | Tube |
Series | - | - | DMJ70H1D3 |