PartNumber | DMN2050LFDB-7 | DMN2053U-7 | DMN2053U-13 |
Description | MOSFET DUAL N-CH EH MODE 20V 45mOhm 4.5A | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K | MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 10K |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | U-DFN2020-B-6 | SOT-23-3 | SOT-23-3 |
Number of Channels | 2 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Configuration | Dual | Single | Single |
Packaging | Reel | Reel | Reel |
Series | DMN2050 | - | - |
Transistor Type | 2 N-Channel | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.000238 oz | 0.000282 oz | 0.000282 oz |
Vds Drain Source Breakdown Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 6.5 A | 6.5 A |
Rds On Drain Source Resistance | - | 29 mOhms | 29 mOhms |
Vgs th Gate Source Threshold Voltage | - | 500 mV | 500 mV |
Vgs Gate Source Voltage | - | 12 V | 12 V |
Qg Gate Charge | - | 4.6 nC | 4.6 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 1.3 W | 1.3 W |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | 3.8 ns | 3.8 ns |
Rise Time | - | 2.9 ns | 2.9 ns |
Typical Turn Off Delay Time | - | 13.5 ns | 13.5 ns |
Typical Turn On Delay Time | - | 2.6 ns | 2.6 ns |