PartNumber | DMN2215UDM-7 | DMN21D2UFB-7B | DMN21D1UDA-7B |
Description | MOSFET 650mW 20V | MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K | MOSFET MOSFETBVDSS: 8V-24V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-26-6 | X1-DFN1006-3 | X2-DFN0806-6 |
Number of Channels | 2 Channel | 1 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 2 A | 760 mA | 455 mA |
Rds On Drain Source Resistance | 100 mOhms | 600 mOhms | 500 mOhms, 500 mOhms |
Vgs th Gate Source Threshold Voltage | 600 mV | 400 mV | 400 mV |
Vgs Gate Source Voltage | 4.5 V | 12 V | 8 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 650 mW | 380 mW | 310 mW |
Configuration | Dual | Single | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | - | - |
Length | 3 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | DMN22 | DMN21 | - |
Transistor Type | 2 N-Channel | 1 N-Channel | 2 N-Channel |
Width | 1.6 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 8.3 ns | 9.8 ns | 12 ns, 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.8 ns | 4.2 ns | 3.4 ns, 3.4 ns |
Factory Pack Quantity | 3000 | 10000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19.6 ns | 19.6 ns | 24 ns, 24 ns |
Typical Turn On Delay Time | 8 ns | 3.5 ns | 4.5 ns, 4.5 ns |
Unit Weight | 0.000529 oz | 0.000035 oz | 0.000035 oz |
Qg Gate Charge | - | 930 pC | 410 pC, 410 pC |