| PartNumber | DMN1019UFDE-7 | DMN1019USN-13 | DMN1019UVT-13 |
| Description | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | MOSFET 12V Enh Mode FET |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | U-DFN2020-E-6 | SC-59-3 | TSOT-26-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | 11 A | 9.3 A | - |
| Rds On Drain Source Resistance | 10 mOhms | 41 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | 530 mV | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Qg Gate Charge | 27.3 nC | 50.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 690 mW | 1.2 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | Reel |
| Series | DMN10 | DMN10 | DMN1019 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 28 S | - | - |
| Fall Time | 16.8 ns | 16.8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 22.2 ns | 57.6 ns | - |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 57.6 ns | 22.2 ns | - |
| Typical Turn On Delay Time | 7.6 ns | 7.6 ns | - |
| Unit Weight | - | 0.000282 oz | 0.000459 oz |