PartNumber | DMN1019UFDE-7 | DMN1019USN-13 | DMN1019UVT-13 |
Description | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | MOSFET 12V Enh Mode FET |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | U-DFN2020-E-6 | SC-59-3 | TSOT-26-6 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
Id Continuous Drain Current | 11 A | 9.3 A | - |
Rds On Drain Source Resistance | 10 mOhms | 41 mOhms | - |
Vgs th Gate Source Threshold Voltage | 800 mV | 530 mV | - |
Vgs Gate Source Voltage | 8 V | 8 V | - |
Qg Gate Charge | 27.3 nC | 50.6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 690 mW | 1.2 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Series | DMN10 | DMN10 | DMN1019 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 28 S | - | - |
Fall Time | 16.8 ns | 16.8 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 22.2 ns | 57.6 ns | - |
Factory Pack Quantity | 3000 | 10000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 57.6 ns | 22.2 ns | - |
Typical Turn On Delay Time | 7.6 ns | 7.6 ns | - |
Unit Weight | - | 0.000282 oz | 0.000459 oz |