DMN1019USN-13

Mfr. #:: DMN1019USN-13
Manufacturer:: Diodes Incorporated
Description:: MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W
Lifecycle:: New from this manufacturer.
Datasheet:: DMN1019USN-13 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Diodes Incorporated

Product Category: FETs - Single

Series: DMN10

Packaging: Digi-ReelR Alternate Packaging

Unit-Weight: 0.000282 oz

Mounting-Style: SMD/SMT

Package-Case: TO-236-3, SC-59, SOT-23-3

Technology: Si

Operating-Temperature: -55°C ~ 150°C (TJ)

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: SC-59

Configuration: Single

FET-Type: MOSFET N-Channel, Metal Oxide

Power-Max: 680mW

Transistor-Type: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 12V

Input-Capacitance-Ciss-Vds: 2426pF @ 10V

FET-Feature: Standard

Current-Continuous-Drain-Id-25°C: 9.3A (Ta)

Rds-On-Max-Id-Vgs: 10 mOhm @ 9.7A, 4.5V

Vgs-th-Max-Id: 800mV @ 250μA

Gate-Charge-Qg-Vgs: 50.6nC @ 8V

Pd-Power-Dissipation: 1.2 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 16.8 ns

Rise-Time: 57.6 ns

Vgs-Gate-Source-Voltage: 8 V

Id-Continuous-Drain-Current: 9.3 A

Vds-Drain-Source-Breakdown-Voltage: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 0.53 V

Rds-On-Drain-Source-Resistance: 41 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 22.2 ns

Typical-Turn-On-Delay-Time: 7.6 ns

Qg-Gate-Charge: 50.6 nC

Channel-Mode: Enhancement

Tags: DMN1019US, DMN1019, DMN101, DMN10, DMN1, DMN

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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DMN1019USN-13 Description

***ical: Trans MOSFET N-CH 12V 9.3A Automotive 3-Pin SC-59 T/R

***et: Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R

***i-Key: MOSFET N-CH 12V 9.3A SC59

***ure Electronics: N-CH 12V 9.3A SC59

***ark: Mosfet, N-Ch, 12V, 9.3A, Sc-59; Transistor Polarity:n Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.007Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530Mv; Power Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; Power Dissipation Pd:680mW; Transistor Case Style:SC-59; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***nell: MOSFET, N-CH, 12V, 9.3A, SC-59; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:9.3A; Napięcie drenu / źródła Vds:12V; Rezystancja przewodzenia Rds(on):0.007ohm; Napięcie Vgs pomiaru Rds(on):4.5V; Napięcie progowe Vgs:530mV; Straty mocy Pd:680mW; Rodzaj obudowy tranzystora:SC-59; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
DMN1019USN-13 DISTI # DMN1019USN-13DITR-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 10000 Container: Tape & Reel (TR)	On Order	10000:$0.1168
DMN1019USN-13 DISTI # DMN1019USN-13DICT-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.1493 500:$0.1991 100:$0.2903 10:$0.4230 1:$0.5400
DMN1019USN-13 DISTI # DMN1019USN-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.1493 500:$0.1991 100:$0.2903 10:$0.4230 1:$0.5400
DMN1019USN-13 DISTI # DMN1019USN-13	Diodes Incorporated	Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R - Tape and Reel (Alt: DMN1019USN-13) RoHS: Not Compliant Min Qty: 10000 Container: Reel	Americas - 0	10000:$0.0919 20000:$0.0869 40000:$0.0829 60000:$0.0789 100000:$0.0769
DMN1019USN-7 DISTI # 621-DMN1019USN-7	Diodes Incorporated	MOSFET 12V N-Ch Enh FET 2426pF 27.3nC RoHS: Compliant	43527	1:$0.4300 10:$0.3250 100:$0.1760 1000:$0.1320 3000:$0.1140
DMN1019USN-13 DISTI # 621-DMN1019USN-13	Diodes Incorporated	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W RoHS: Compliant	0	10000:$0.1070

Related products

Image	Part #	Description
	Mfr.#: DMN1019UFDE-7 OMO.#: OMO-DMN1019UFDE-7	MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
	Mfr.#: DMN1017UCP3-7 OMO.#: OMO-DMN1017UCP3-7	MOSFET MOSFETBVDSS: 8V-24V
	Mfr.#: DMN1019UVT-7 OMO.#: OMO-DMN1019UVT-7	MOSFET 12V Enh Mode FET
	Mfr.#: DMN1019UVT-13 OMO.#: OMO-DMN1019UVT-13	MOSFET 12V Enh Mode FET
	Mfr.#: DMN1016UCB6-7 OMO.#: OMO-DMN1016UCB6-7	MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A
	Mfr.#: DMN1019USN OMO.#: OMO-DMN1019USN-1190	New and Original
	Mfr.#: DMN1019USN-7-F OMO.#: OMO-DMN1019USN-7-F-1190	New and Original
	Mfr.#: DMN1016UCB6-7 OMO.#: OMO-DMN1016UCB6-7-DIODES	MOSFET N-CH 12V 5.5A U-WLB1510-6
	Mfr.#: DMN1019USN-7 OMO.#: OMO-DMN1019USN-7-DIODES	IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC
	Mfr.#: DMN1019USN-13 OMO.#: OMO-DMN1019USN-13-DIODES	MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W

Availability

Stock:: Available
On Order:: 3500
Enter Quantity:

Current price of DMN1019USN-13 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$0.12~~; ~~$0.12~~

10: ~~$0.11~~; ~~$1.10~~

100: ~~$0.10~~; ~~$10.38~~

500: ~~$0.10~~; ~~$49.00~~

1000: ~~$0.09~~; ~~$92.30~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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DMN1019US 4
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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes