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| PartNumber | DMN1019USN-13 | DMN1019USN | DMN1019USN-7 |
| Description | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC | |
| Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SC-59-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 12 V | - | - |
| Id Continuous Drain Current | 9.3 A | - | - |
| Rds On Drain Source Resistance | 41 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 530 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 50.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.2 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Series | DMN10 | - | DMN1019 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 16.8 ns | - | 16.8 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 57.6 ns | - | 57.6 ns |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22.2 ns | - | 22.2 ns |
| Typical Turn On Delay Time | 7.6 ns | - | 7.6 ns |
| Unit Weight | 0.000282 oz | - | 0.000282 oz |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SC-59 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 680mW |
| Drain to Source Voltage Vdss | - | - | 12V |
| Input Capacitance Ciss Vds | - | - | 2426pF @ 10V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 9.3A (Ta) |
| Rds On Max Id Vgs | - | - | 10 mOhm @ 9.7A, 4.5V |
| Vgs th Max Id | - | - | 800mV @ 250μA |
| Gate Charge Qg Vgs | - | - | 50.6nC @ 8V |
| Pd Power Dissipation | - | - | 1.2 W |
| Vgs Gate Source Voltage | - | - | 4.5 V |
| Id Continuous Drain Current | - | - | 9.3 A |
| Vds Drain Source Breakdown Voltage | - | - | 12 V |
| Vgs th Gate Source Threshold Voltage | - | - | 0.53 V |
| Rds On Drain Source Resistance | - | - | 41 mOhms |
| Qg Gate Charge | - | - | 27.3 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN1019USN-13 | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W | |
| DMN1019USN | New and Original | ||
| DMN1019USN-7-F | New and Original | ||
| DMN1019USN-7 | IGBT Transistors MOSFET 12V N-Ch Enh FET 2426pF 27.3nC | ||
| DMN1019USN-13 | MOSFET 12V N-Ch Enh Mode FET 8Vgss 0.68W |