PartNumber | DMN2004DMK-7 | DMN2004DWK-7 | DMN2004DWKQ-7 |
Description | MOSFET Dual N-Channel | MOSFET Dual N-Channel | MOSFET MOSFET BVDSS: 8V-24V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-26-6 | SOT-363-6 | SOT-363-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 540 mA | 540 mA | 540 mA |
Rds On Drain Source Resistance | 550 mOhms | 550 mOhms | 400 mOhms, 400 mOhms |
Vgs Gate Source Voltage | 8 V | 8 V | 8 V |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 225 mW | 200 mW | 200 mW |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1.1 mm | 1 mm | - |
Length | 3 mm | 2.2 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | DMN2004 | DMN2004 | DMN2004D |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 1.6 mm | 1.35 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.000529 oz | 0.000212 oz | - |
Vgs th Gate Source Threshold Voltage | - | 500 mV | 500 mV |
Qg Gate Charge | - | 0.53 nC | 950 pC, 950 pC |
Fall Time | - | 10.5 ns | 10.5 ns, 10.5 ns |
Rise Time | - | 7.3 ns | 7.3 ns, 7.3 ns |
Typical Turn Off Delay Time | - | 13.8 ns | 13.8 ns, 13.8 ns |
Typical Turn On Delay Time | - | 4.1 ns | 4.1 ns, 4.1 ns |
Qualification | - | - | AEC-Q101 |
Forward Transconductance Min | - | - | 200 mS, 200 mS |