PartNumber | DMN2008LFU-7 | DMN2008LFU-13 | DMN2009USS-13 |
Description | MOSFET MOSFET BVDSS: 8V-24V | MOSFET MOSFET BVDSS: 8V-24V | MOSFET MOSFET BVDSS: 8V-24V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | U-DFN2030-B-6 | U-DFN2030-B-6 | SO-8 |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.000423 oz | 0.000423 oz | - |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 12.1 A |
Rds On Drain Source Resistance | - | - | 12 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 500 mV |
Vgs Gate Source Voltage | - | - | 12 V |
Qg Gate Charge | - | - | 34 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 2 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 11 ns |
Rise Time | - | - | 6.2 ns |
Typical Turn Off Delay Time | - | - | 25 ns |
Typical Turn On Delay Time | - | - | 4.2 ns |