DMN2022

DMN2022UDH-7 vs DMN2022UFDF-13 vs DMN2022UDH-13

 
PartNumberDMN2022UDH-7DMN2022UFDF-13DMN2022UDH-13
DescriptionMOSFET MOSFET BVDSS: 8V-24VMOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66WMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
RoHS-Y-
Mounting Style-SMD/SMT-
Package / Case-U-DFN2020-F-6-
Number of Channels-1 Channel-
Transistor Polarity-N-Channel-
Vds Drain Source Breakdown Voltage-20 V-
Id Continuous Drain Current-7.9 A-
Rds On Drain Source Resistance-35 mOhms-
Vgs th Gate Source Threshold Voltage-1 V-
Vgs Gate Source Voltage-8 V-
Qg Gate Charge-18 nC-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-2.03 W-
Configuration-Single-
Channel Mode-Enhancement-
Tradename-PowerDI-
Packaging-Reel-
Series-DMN2022-
Transistor Type-1 N-Channel-
Fall Time-239 ns-
Rise Time-87 ns-
Typical Turn Off Delay Time-632 ns-
Typical Turn On Delay Time-56 ns-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN2022UFDF-7 MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
DMN2022UNS-13 MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W
DMN2022UDH-7 MOSFET MOSFET BVDSS: 8V-24V
DMN2022UFDF-13 MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
DMN2022UDH-13 MOSFET MOSFET BVDSS: 8V-24V
DMN2022UNS New and Original
DMN2022UNS-13 MOSFET 8V 24V POWERDI3333-8
DMN2022UNS-7 MOSFET 2 N-CH 20V POWERDI3333-8
DMN2022UFDF-7 IGBT Transistors MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
DMN2022UFDF-13 MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W
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