DMN2029

DMN2029USD-13 vs DMN2029UVT-13 vs DMN2029UVT-7

 
PartNumberDMN2029USD-13DMN2029UVT-13DMN2029UVT-7
DescriptionMOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8AMOSFET MOSFET BVDSS: 8V-24VMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8TSOT-26-6TSOT-26-6
Number of Channels2 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current5.8 A6.8 A6.8 A
Rds On Drain Source Resistance25 mOhms, 25 mOhms24 mOhms24 mOhms
Vgs th Gate Source Threshold Voltage1.5 V0.4 V0.4 V
Vgs Gate Source Voltage8 V10 V10 V
Qg Gate Charge10.4 nC7.1 nC7.1 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.2 W1.7 W1.7 W
ConfigurationDualSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN2029--
Transistor Type2 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min10 S--
Fall Time53.5 ns433 ns433 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10.4 ns139 ns139 ns
Factory Pack Quantity2500100003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time119.3 ns1023 ns1023 ns
Typical Turn On Delay Time16.5 ns98 ns98 ns
Unit Weight0.002610 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN2029USD-13 MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A
DMN2029UVT-13 MOSFET MOSFET BVDSS: 8V-24V
DMN2029UVT-7 MOSFET MOSFET BVDSS: 8V-24V
DMN2029USD-13 Trans MOSFET N-CH 20V 5.8A Automotive 8-Pin SO T/R
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