| PartNumber | DMN2029USD-13 | DMN2029UVT-13 | DMN2029UVT-7 |
| Description | MOSFET 20V Dual N-Ch ENH 20V 25mOhm 4.5V 5.8A | MOSFET MOSFET BVDSS: 8V-24V | MOSFET MOSFET BVDSS: 8V-24V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | TSOT-26-6 | TSOT-26-6 |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 5.8 A | 6.8 A | 6.8 A |
| Rds On Drain Source Resistance | 25 mOhms, 25 mOhms | 24 mOhms | 24 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 0.4 V | 0.4 V |
| Vgs Gate Source Voltage | 8 V | 10 V | 10 V |
| Qg Gate Charge | 10.4 nC | 7.1 nC | 7.1 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.2 W | 1.7 W | 1.7 W |
| Configuration | Dual | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN2029 | - | - |
| Transistor Type | 2 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 53.5 ns | 433 ns | 433 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10.4 ns | 139 ns | 139 ns |
| Factory Pack Quantity | 2500 | 10000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 119.3 ns | 1023 ns | 1023 ns |
| Typical Turn On Delay Time | 16.5 ns | 98 ns | 98 ns |
| Unit Weight | 0.002610 oz | - | - |