DMN2100UDM-7

DMN2100UDM-7 vs DMN2100UDM-7-F vs DMN2100UDM-7-CUT TAPE

 
PartNumberDMN2100UDM-7DMN2100UDM-7-FDMN2100UDM-7-CUT TAPE
DescriptionMOSFET 900mW 20Vdss
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.3 A--
Rds On Drain Source Resistance55 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation900 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesDMN21--
Transistor Type1 N-Channel--
Width1.6 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000529 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN2100UDM-7 MOSFET 900mW 20Vdss
DMN2100UDM-7-F New and Original
DMN2100UDM-7-CUT TAPE New and Original
DMN2100UDM-7 MOSFET 900mW 20Vdss
Top