PartNumber | DMN2230U-7 | DMN2215UDM-7 | DMN2230UQ-13 |
Description | MOSFET 600mW 20Vdss | MOSFET 650mW 20V | MOSFET MOSFET BVDSS: |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-26-6 | SOT-23-3 |
Number of Channels | 1 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 2 A | 2 A | - |
Rds On Drain Source Resistance | 110 mOhms | 100 mOhms | - |
Vgs Gate Source Voltage | 12 V | 4.5 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 600 mW | 650 mW | - |
Configuration | Single | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1.1 mm | - |
Length | 2.9 mm | 3 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | DMN22 | DMN22 | - |
Transistor Type | 1 N-Channel | 2 N-Channel | - |
Width | 1.3 mm | 1.6 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 3.8 ns | 8.3 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.8 ns | 3.8 ns | - |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19.6 ns | 19.6 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Unit Weight | 0.000282 oz | 0.000529 oz | 0.000282 oz |
Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
Qualification | - | - | AEC-Q101 |