 |  | | |
| PartNumber | DMN2300UFB4-7B | DMN2300UFB4-7 | DMN2300UFB4-7BDIODES |
| Description | MOSFET 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | X2-DFN1006-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.3 A | - | - |
| Rds On Drain Source Resistance | 175 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 1.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 500 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN2300 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.8 ns | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 3.5 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN2300UFB4-7B | MOSFET 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A | |
| DMN2300UFB4-7 | New and Original | ||
| DMN2300UFB4-7B | Trans MOSFET N-CH 20V 1.3A Automotive 3-Pin X2-DFN T/R | ||
| DMN2300UFB4-7BDIODES | New and Original |