DMN245

DMN2450UFB4-7B vs DMN2450UFB4-7R vs DMN2450UFD-7

 
PartNumberDMN2450UFB4-7BDMN2450UFB4-7RDMN2450UFD-7
DescriptionMOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10KMOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 3KMOSFET MOSFET BVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseX1-DFN1212-3X1-DFN1212-3X1-DFN1212-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current900 mA900 mA900 mA
Rds On Drain Source Resistance600 mOhms600 mOhms600 mOhms
Vgs th Gate Source Threshold Voltage450 mV450 mV450 mV
Vgs Gate Source Voltage12 V12 V4.5 V
Qg Gate Charge0.7 nC0.7 nC700 pC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation0.89 W0.89 W800 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReel-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time5.6 ns5.6 ns5.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time2.4 ns2.4 ns2.4 ns
Factory Pack Quantity1000030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20.9 ns20.9 ns20.9 ns
Typical Turn On Delay Time3.7 ns3.7 ns3.7 ns
Unit Weight0.000176 oz0.000176 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN2450UFB4-7B MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 10K
DMN2450UFB4-7R MOSFET MOSFET BVDSS: 8V~24V X2-DFN1006-3 T&R 3K
DMN2450UFD-7 MOSFET MOSFET BVDSS: 8V-24V
DMN2450UFB4-7B MOSFET BVDSS: 8V-24V X2-DFN1006-
DMN2450UFB4-7R MOSFET BVDSS: 8V-24V X2-DFN1006-
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