PartNumber | DMN26D0UDJ-7 | DMN26D0UDJ-7-F | DMN26D0UFB4 |
Description | MOSFET DUAL N-CH 20V 0.23A | ||
Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-963-6 | - | - |
Number of Channels | 2 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 240 mA | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 300 mW | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Product | MOSFET Gate Drivers | - | - |
Series | DMN26 | - | DMN26 |
Transistor Type | 2 N-Channel | - | 1 N-Channel |
Type | Dual N-Channel Enhancement Mode MOSFET | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 180 mS | - | - |
Fall Time | 15.2 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 7.9 ns | - | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13.4 ns | - | 29 ns |
Typical Turn On Delay Time | 3.8 ns | - | 12 ns |
Package Case | - | - | 3-XFDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | X2-DFN1006-3 |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 350mW |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 14.1pF @ 15V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 230mA (Ta) |
Rds On Max Id Vgs | - | - | 3 Ohm @ 100mA, 4.5V |
Vgs th Max Id | - | - | 1.1V @ 250μA |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | - | - | 350 mW |
Id Continuous Drain Current | - | - | 230 mA |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 1.8 Ohms |
Forward Transconductance Min | - | - | 0.242 S |