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| PartNumber | DMN4800LSSL-13 | DMN4800LSSL | DMN4800LSSL-13-F |
| Description | MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K | MOSFET, N CHANNEL, W DIODE, 30V, 8A, SO8, Transistor Polarity:N Channel, Continuous Drain Current Id:6.7A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:1 | |
| Manufacturer | Diodes Incorporated | 30000DIODES | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | Details | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 8 A | 8 A | - |
| Rds On Drain Source Resistance | 14 mOhms | 14 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 8.7 nC | 8.7 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.46 W | 1.46 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN4800 | DMN4800 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 8 S | 8 S | - |
| Fall Time | 8.55 ns | 8.55 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.5 ns | 4.5 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.33 ns | 26.33 ns | - |
| Typical Turn On Delay Time | 5.03 ns | 5.03 ns | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |