DMN4800LSSL

DMN4800LSSL-13 vs DMN4800LSSL vs DMN4800LSSL-13-F

 
PartNumberDMN4800LSSL-13DMN4800LSSLDMN4800LSSL-13-F
DescriptionMOSFET MOSFET BVDSS: 25V-30 SO-8,2.5KMOSFET, N CHANNEL, W DIODE, 30V, 8A, SO8, Transistor Polarity:N Channel, Continuous Drain Current Id:6.7A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:1
ManufacturerDiodes Incorporated30000DIODES-
Product CategoryMOSFETFETs - Single-
RoHSYDetails-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current8 A8 A-
Rds On Drain Source Resistance14 mOhms14 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge8.7 nC8.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.46 W1.46 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMN4800DMN4800-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min8 S8 S-
Fall Time8.55 ns8.55 ns-
Product TypeMOSFET--
Rise Time4.5 ns4.5 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26.33 ns26.33 ns-
Typical Turn On Delay Time5.03 ns5.03 ns-
Unit Weight0.002610 oz0.002610 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN4800LSSL-13 MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
DMN4800LSSL MOSFET, N CHANNEL, W DIODE, 30V, 8A, SO8, Transistor Polarity:N Channel, Continuous Drain Current Id:6.7A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:1
DMN4800LSSL-13-F New and Original
DMN4800LSSL-13 Darlington Transistors MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
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