DMN601DMK-7

DMN601DMK-7 vs DMN601DMK-7-73 vs DMN601DMK-7-F

 
PartNumberDMN601DMK-7DMN601DMK-7-73DMN601DMK-7-F
DescriptionMOSFET Dual N-Channel
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current305 mA--
Rds On Drain Source Resistance4 Ohms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge304 nC--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation225 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length3 mm--
ProductMOSFET Small Signal--
SeriesDMN60--
Transistor Type2 N-Channel--
Width1.6 mm--
BrandDiodes Incorporated--
Forward Transconductance Min100 mS--
Fall Time9.9 ns--
Product TypeMOSFET--
Rise Time3.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15.7 ns--
Typical Turn On Delay Time3.9 ns--
Unit Weight0.000529 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN601DMK-7 MOSFET Dual N-Channel
DMN601DMK-7-73 New and Original
DMN601DMK-7-F New and Original
DMN601DMK-7 Darlington Transistors MOSFET Dual N-Channel
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