 |  | | |
| PartNumber | DMN6068SE-13 | DMN6068SE-1 | DMN6068SE-13-CUT TAPE |
| Description | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.6 A | - | - |
| Rds On Drain Source Resistance | 68 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 10.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Digi-ReelR Alternate Packaging | - |
| Series | DMN6068 | DMN6068 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 19.7 S | - | - |
| Fall Time | 8.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10.8 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11.9 ns | 11.9 ns | - |
| Typical Turn On Delay Time | 3.6 ns | 3.6 ns | - |
| Unit Weight | 0.003951 oz | 0.000282 oz | - |
| Package Case | - | TO-261-4, TO-261AA | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-223 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 2W | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 502pF @ 30V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 4.1A (Ta) | - |
| Rds On Max Id Vgs | - | 68 mOhm @ 12A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 10.3nC @ 10V | - |
| Pd Power Dissipation | - | 16 W | - |
| Id Continuous Drain Current | - | 5.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 68 mOhms | - |
| Qg Gate Charge | - | 10.3 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6068SE-13 | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | |
| DMN6068SE-1 | New and Original | ||
| DMN6068SE-13DKR-ND | New and Original | ||
| DMN6068SE-13-CUT TAPE | New and Original | ||
| DMN6068SE-13 | Darlington Transistors MOSFET ENHANCE MODE MOSFET 60V N-CHAN |