 | |  | |
| PartNumber | DMTH6016LFVW-13 | DMTH6016LFVW-7 | DMTH6016LFVWQ-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Packaging | Reel | Reel | Reel |
| Series | DMTH6016 | DMTH6016 | DMTH6016 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 2000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| RoHS | - | - | Y |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | PowerDI-3333-8 |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Id Continuous Drain Current | - | - | 41 A |
| Rds On Drain Source Resistance | - | - | 16 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 15.1 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 175 C |
| Pd Power Dissipation | - | - | 2.38 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Qualification | - | - | AEC-Q101 |
| Transistor Type | - | - | 1 N-Channel |
| Fall Time | - | - | 5.9 ns |
| Rise Time | - | - | 6.3 ns |
| Typical Turn Off Delay Time | - | - | 14.3 ns |
| Typical Turn On Delay Time | - | - | 3.9 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMTH6016LFVWQ-7 | MOSFET MOSFET BVDSS: 41V-60V | |
| DMTH6016LFVW-13 | MOSFET MOSFET BVDSS: 41V-60V | ||
| DMTH6016LFVW-7 | MOSFET MOSFET BVDSS: 41V-60V | ||
| DMTH6016LFVWQ-13 | MOSFET MOSFET BVDSS: 41V-60V |