PartNumber | FCB110N65F | FCB1100DB/009 | FCB11N60 |
Description | MOSFET SF2 650V 110MOHM F D2PAK | MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.32ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage V | |
Manufacturer | ON Semiconductor | - | FAIRCHILD |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 35 A | - | - |
Rds On Drain Source Resistance | 110 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 20 V, 30 V | - | - |
Qg Gate Charge | 98 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 357 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | SuperFET II FRFET | - | - |
Packaging | Reel | - | - |
Height | 4.83 mm | - | - |
Length | 10.67 mm | - | - |
Series | FCB110N65F | - | - |
Width | 9.65 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 5.7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 21 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 89 ns | - | - |
Typical Turn On Delay Time | 31 ns | - | - |
Unit Weight | 0.046296 oz | - | - |