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FCB11N60TM

FCB11N60TM
Mfr. #:
FCB11N60TM
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET HIGH POWER
Lifecycle:
New from this manufacturer.
Datasheet:
FCB11N60TM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
11 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs - Gate-Source Voltage:
30 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
SuperFET
Packaging:
Reel
Height:
4.83 mm
Length:
10.67 mm
Series:
FCB11N60
Transistor Type:
1 N-Channel
Width:
9.65 mm
Brand:
ON Semiconductor / Fairchild
Fall Time:
56 ns
Product Type:
MOSFET
Rise Time:
98 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
119 ns
Typical Turn-On Delay Time:
34 ns
Unit Weight:
0.046296 oz
Tags
FCB11N, FCB11, FCB1, FCB
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK
*** Source Electronics
MOSFET N-CH 600V 11A D2PAK / Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ment14 APAC
MOSFET, N CH, 600V, 11A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:33A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
N-Channel 500 V 11 A 380 mOhm 150 W Surface Mount Power Mosfet - D2PAK
***icroelectronics
N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET
***et
Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 500V, 14A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:D2-PAK; Power Dissipation Pd:150W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET
***ure Electronics
N-Channel 550 V 0.35 Ohm Surface Mount MDmesh™ MosFet - D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
***enic
550V 12A 160W 350m´Î@10V6A 5V@50Ã×A N Channel TO-263-3(D2PAK) MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:550V; On Resistance
***r Electronics
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C
***icroelectronics
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Res Thin Film 1206 20K Ohm 0.1% 0.125W(1/8W) ±25ppm/C Molded SMD Paper T/R
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 650V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***(Formerly Allied Electronics)
IRFS9N60APBF N-channel MOSFET Transistor; 9.2 A; 600 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK
***ure Electronics
IRFS11N50A Series 500 V 7 A 0.52 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N, 500V, 11A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.52ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Di
***ure Electronics
Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.85Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
***roFlash
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part # Mfg. Description Stock Price
FCB11N60TM
DISTI # V72:2272_06339821		ON SemiconductorSF1 600V 380MOHM E D2PAK775
  • 500:$1.4060
  • 250:$1.5404
  • 100:$1.5565
  • 25:$1.9590
  • 10:$1.9980
  • 1:$2.5863
FCB11N60TM
DISTI # V36:1790_06339821		ON SemiconductorSF1 600V 380MOHM E D2PAK0
  • 800000:$0.9787
  • 400000:$0.9805
  • 80000:$1.0900
  • 8000:$1.2620
  • 800:$1.2900
FCB11N60TM
DISTI # FCB11N60TMCT-ND		ON SemiconductorMOSFET N-CH 600V 11A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		790In Stock
  • 100:$1.8602
  • 10:$2.3140
  • 1:$2.5800
FCB11N60TM
DISTI # FCB11N60TMDKR-ND		ON SemiconductorMOSFET N-CH 600V 11A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		790In Stock
  • 100:$1.8602
  • 10:$2.3140
  • 1:$2.5800
FCB11N60TM
DISTI # FCB11N60TMTR-ND		ON SemiconductorMOSFET N-CH 600V 11A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5600:$1.1022
  • 2400:$1.1446
  • 1600:$1.2294
  • 800:$1.4838
FCB11N60TM
DISTI # 33628371		ON SemiconductorSF1 600V 380MOHM E D2PAK775
  • 6:$2.5863
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FCB11N60TM)
Min Qty: 261
Container: Bulk		Americas - 0
  • 2610:$1.0900
  • 261:$1.1900
  • 522:$1.1900
  • 783:$1.1900
  • 1305:$1.1900
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€0.9359
  • 4800:€1.0029
  • 3200:€1.0799
  • 1600:€1.1699
  • 800:€1.4039
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB11N60TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$0.9959
  • 4800:$1.0219
  • 3200:$1.0349
  • 1600:$1.0479
  • 800:$1.0549
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 40000:$1.3238
  • 20000:$1.3458
  • 8000:$1.3922
  • 4000:$1.4420
  • 2400:$1.4954
  • 1600:$1.5529
  • 800:$1.6150
FCB11N60TM
DISTI # 31K6744		ON SemiconductorN CHANNEL MOSFET, 600V, 11A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 9600:$1.1300
  • 2400:$1.1700
  • 800:$1.2800
  • 1:$1.2900
FCB11N60TM
DISTI # 512-FCB11N60TM		ON SemiconductorMOSFET HIGH POWER
RoHS: Compliant		1100
  • 1:$2.3700
  • 10:$2.0100
  • 100:$1.6100
  • 500:$1.4100
  • 800:$1.1700
  • 2400:$1.1600
FCB11N60TMON SemiconductorPower Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		7
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
FCB11N60TM
DISTI # 6710337P		ON SemiconductorMOSFET N-CHANNEL 600V 11A D2PAK, RL2233
  • 200:£1.5800
  • 100:£1.6300
  • 50:£1.7300
  • 10:£1.9000
FCB11N60TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		800
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of FCB11N60TM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.37
    $2.37
    10
    $2.01
    $20.10
    100
    $1.61
    $161.00
    500
    $1.41
    $705.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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