PartNumber | FDB20N50F | FDB2532 | FDB16AN08A0 |
Description | MOSFET UF 500V 260MOHM F D2PAK | MOSFET 150V N-Channel QFET Trench | MOSFET Discrete Auto N-Ch UltraFET Trench |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 150 V | 75 V |
Id Continuous Drain Current | 20 A | 79 A | 58 A |
Rds On Drain Source Resistance | 260 mOhms | 14 mOhms | 13 mOhms |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 50 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Pd Power Dissipation | 250 W | 310 W | 135 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | UniFET | PowerTrench | PowerTrench |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FDB20N50F | FDB2532 | FDB16AN08A0 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 25 S | - | - |
Fall Time | 60 ns | 17 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 120 ns | 30 ns | 82 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 100 ns | 39 ns | 28 ns |
Typical Turn On Delay Time | 45 ns | 16 ns | 8 ns |
Unit Weight | 0.062153 oz | 0.045856 oz | 0.046296 oz |
Type | - | MOSFET | MOSFET |
Part # Aliases | - | FDB2532_NL | - |