PartNumber | FDB2572 | FDB2614 | FDB28N30TM |
Description | MOSFET N-Channel UltraFET | MOSFET 200V N-Channel PowerTrench MOSFET | MOSFET 300V N-Channel |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 150 V | 200 V | 300 V |
Id Continuous Drain Current | 29 A | 62 A | 28 A |
Rds On Drain Source Resistance | 45 mOhms | 22.9 mOhms | 108 mOhms |
Vgs Gate Source Voltage | 20 V | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 135 W | 260 W | 250 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | PowerTrench | PowerTrench | UniFET |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Series | FDB2572 | FDB2614 | FDB28N30TM |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Fall Time | 14 ns | 162 ns | 69 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 ns | 284 ns | 135 ns |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | 103 ns | 79 ns |
Typical Turn On Delay Time | 11 ns | 77 ns | 35 ns |
Part # Aliases | FDB2572_NL | - | - |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
Type | - | MOSFET | - |
Forward Transconductance Min | - | 72 S | - |