PartNumber | FDD10AN06A0 | FDD10AN06 | FDD10AN06A |
Description | MOSFET 60V 50a .15 Ohms/VGS=1V | ||
Manufacturer | ON Semiconductor | Fairchild Semiconductor | |
Product Category | MOSFET | IC Chips | FETs - Single |
RoHS | E | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 50 A | - | - |
Rds On Drain Source Resistance | 9.4 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 135 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | PowerTrench | - | - |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Height | 2.39 mm | - | - |
Length | 6.73 mm | - | - |
Series | FDD10AN06A0 | - | PowerTrenchR |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 32 ns | - | 32 ns |
Product Type | MOSFET | - | - |
Rise Time | 79 ns | - | 79 ns |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 32 ns | - | 32 ns |
Typical Turn On Delay Time | 8 ns | - | 8 ns |
Part # Aliases | FDD10AN06A0_NL | - | - |
Unit Weight | 0.009184 oz | - | 0.009184 oz |
Part Aliases | - | - | FDD10AN06A0_NL |
Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | TO-252AA |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 135W |
Drain to Source Voltage Vdss | - | - | 60V |
Input Capacitance Ciss Vds | - | - | 1840pF @ 25V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 11A (Ta), 50A (Tc) |
Rds On Max Id Vgs | - | - | 10.5 mOhm @ 50A, 10V |
Vgs th Max Id | - | - | 4V @ 250μA |
Gate Charge Qg Vgs | - | - | 37nC @ 10V |
Pd Power Dissipation | - | - | 135 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 50 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 9.4 mOhms |