FDD10AN06A0

FDD10AN06A0 vs FDD10AN06A0-F085

 
PartNumberFDD10AN06A0FDD10AN06A0-F085
DescriptionMOSFET 60V 50a .15 Ohms/VGS=1VMOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSEY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current50 A50 A
Rds On Drain Source Resistance9.4 mOhms9.4 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation135 W135 W
ConfigurationSingleSingle
Channel ModeEnhancement-
TradenamePowerTrench-
PackagingReelReel
Height2.39 mm2.39 mm
Length6.73 mm6.73 mm
SeriesFDD10AN06A0FDD10AN06_F085
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time32 ns32 ns
Product TypeMOSFETMOSFET
Rise Time79 ns79 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time32 ns32 ns
Typical Turn On Delay Time8 ns8 ns
Part # AliasesFDD10AN06A0_NLFDD10AN06A0_F085
Unit Weight0.009184 oz0.009184 oz
Vgs th Gate Source Threshold Voltage-4 V
Qg Gate Charge-28 nC
Qualification-AEC-Q101
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD10AN06A0 MOSFET 60V 50a .15 Ohms/VGS=1V
FDD10AN06A0-F085 MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET
ON Semiconductor
ON Semiconductor
FDD10AN06A0 MOSFET N-CH 60V 50A D-PAK
FDD10AN06A0-F085 MOSFET N-CH 60V 11A D-PAK
FDD10AN06A0-NL New and Original
FDD10AN06A0_F085 N-CHANNEL POWERTRENCH MOSFET
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