 |  | | |
| PartNumber | FDI045N10A-F102 | FDI045N10A | FDI045N10AF102 |
| Description | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | MOSFET N-CH 100V 120A I2PAK-3 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 54 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 263 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 7.88 mm | - | - |
| Length | 10.29 mm | - | - |
| Series | FDI045N10A | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 132 S | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 26 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 23 ns | - | - |
| Part # Aliases | FDI045N10A_F102 | - | - |
| Unit Weight | 0.073511 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDI045N10A-F102 | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | |
ON Semiconductor |
FDI045N10A | MOSFET N-CH 100V 120A I2PAK-3 | |
| FDI045N10A-F102 | MOSFET N-CH 100V 120A I2PAK-3 | ||
| FDI045N10AF102 | New and Original | ||
| FDI045N10A_F102 | 100V 4.5MOHM I2PAK 3L JEDEC |