PartNumber | FDS6673BZ-F085 | FDS6675 | FDS6673BZ |
Description | MOSFET -30V P-Channel PowerTrench | MOSFET SO-8 P-CH -30V | MOSFET -30V P-Channel PowerTrench MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 14.5 A | 11 A | 14.5 A |
Rds On Drain Source Resistance | 6.5 mOhms | 14 mOhms | 6.5 mOhms |
Vgs Gate Source Voltage | 25 V | 20 V | 25 V |
Qg Gate Charge | 88 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
Configuration | Single | Single | Single |
Qualification | AEC-Q101 | - | - |
Tradename | PowerTrench | PowerTrench | PowerTrench |
Packaging | Reel | Reel | Reel |
Height | 1.75 mm | 1.75 mm | 1.75 mm |
Length | 4.9 mm | 4.9 mm | 4.9 mm |
Series | FDS6673BZ_F085 | FDS6675 | FDS6673BZ |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 3.9 mm | 3.9 mm | 3.9 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Forward Transconductance Min | 60 S | 32 S | 60 S |
Fall Time | 105 ns | 100 ns | 105 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | 16 ns | 16 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 225 ns | 50 ns | 225 ns |
Typical Turn On Delay Time | 14 ns | 12 ns | 14 ns |
Part # Aliases | FDS6673BZ_F085 | FDS6675_NL | - |
Unit Weight | 0.008127 oz | 0.004586 oz | 0.004586 oz |
Channel Mode | - | Enhancement | Enhancement |
Type | - | MOSFET | MOSFET |