FF200R12KE4

FF200R12KE4PHOSA1 vs FF200R12KE4 vs FF200R12KE4HOSA1

 
PartNumberFF200R12KE4PHOSA1FF200R12KE4FF200R12KE4HOSA1
DescriptionIGBT Modules MEDIUM POWER 62MMIGBT Modules IGBT-MODULETrans IGBT Module N-CH 1200V 240A 1100000mW 7-Pin Tray
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity810-
SubcategoryIGBTsIGBTs-
Part # AliasesFF200R12KE4P SP001097392FF200R12KE4HOSA1 SP000370604-
Product-IGBT Silicon Modules-
Configuration-Dual-
Collector Emitter Voltage VCEO Max-1200 V-
Collector Emitter Saturation Voltage-2.05 V-
Continuous Collector Current at 25 C-240 A-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-1100 W-
Package / Case-62 mm-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Height-30.5 mm-
Length-106.4 mm-
Width-61.4 mm-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
Unit Weight-12 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FF200R12KE4PHOSA1 IGBT Modules MEDIUM POWER 62MM
FF200R12KE4 IGBT Modules IGBT-MODULE
FF200R12KE4PHOSA1 MOD IGBT MED PWR 62MM-1
FF200R12KE4HOSA1 Trans IGBT Module N-CH 1200V 240A 1100000mW 7-Pin Tray
FF200R12KE4 IGBT Modules IGBT-MODULE
FF200R12KE4P New and Original
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