PartNumber | FP50R12KT3 | FP50R12KT4 | FP50R12KT3BOSA1 |
Description | IGBT Modules N-CH 1.2KV 75A | IGBT Modules N-CH 1.2KV 50A | IGBT MODULE VCES 600V 50A |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Configuration | Hex | 3-Phase | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
Continuous Collector Current at 25 C | 75 A | 50 A | - |
Package / Case | Econo 3 | Econo 3 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 125 C | + 150 C | - |
Packaging | Tray | Tray | - |
Height | 17 mm | 17 mm | - |
Length | 122 mm | 107.5 mm | - |
Width | 62 mm | 45 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 10 | 10 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FP50R12KT3BOSA1 SP000100445 | FP50R12KT4BOSA1 SP000372915 | - |
Unit Weight | 10.582189 oz | 6.349313 oz | - |
Collector Emitter Saturation Voltage | - | 2.25 V | - |
Gate Emitter Leakage Current | - | 100 nA | - |
Pd Power Dissipation | - | 280 W | - |