FP50R12KT4GBOSA1

Mfr. #:: FP50R12KT4GBOSA1
Manufacturer:: Infineon Technologies
Description:: IGBT MODULE VCES 600V 50A
Lifecycle:: New from this manufacturer.
Datasheet:: FP50R12KT4GBOSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: FP50R12KT4G, FP50R12KT4, FP50R12KT, FP50R12K, FP50R1, FP50R, FP50, FP5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FP50R12KT4GBOSA1 Description

***ical: Trans IGBT Module N-CH 1200V 50A 280000mW 23-Pin Tray

***et: Trans IGBT Module N-CH 1.2KV 50A 35-pin ECONO3-3

***ark: IGBT MODULE, NPN, 1.85V, 50A

***omponent: Infineon power module

***i-Key: IGBT MODULE VCES 600V 50A

***nell: IGBT MODULE, NPN, 1.85V, 50A; Biegunowość tranzystora:NPN; Prąd kolektora DC:50A; Napięcie nasycenia kolektor - emiter Vce(on):1.85V; Straty mocy Pd:280W; Napięcie kolektor - emiter V(br)ceo:1.2kV; Rodzaj obudowy tranzystora:Module; Liczba pinów:35piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Substancje SVHC:No SVHC (27-Jun-2018); Temperatura robocza, min.:-40°C

***ment14 APAC: Prices include import duty and tax. IGBT MODULE, NPN, 1.85V, 50A; Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:280W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:35Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C

***ineon: EconoPIM 3 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low Switching Losses; Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; Al(2)O(3) Substrate with Low Thermal Resistance; High Power and Thermal Cycling Capability; Integrated NTC temperature sensor; Copper Base Plate; Solder Contact Technology; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; induction; aircon

Market price

Part #	Mfg.	Description	Stock	Price
FP50R12KT4GBOSA1 DISTI # V99:2348_18206020	Infineon Technologies AG	Trench and Field Stop IGBT4un RoHS: Compliant	10	100:$99.4400 25:$107.6700 10:$119.6300 1:$132.9199
FP50R12KT4GBOSA1 DISTI # FP50R12KT4GBOSA1-ND	Infineon Technologies AG	IGBT MODULE VCES 600V 50A RoHS: Not compliant Min Qty: 10 Container: Bulk	Temporarily Out of Stock	10:$106.1220
FP50R12KT4GBOSA1 DISTI # 26574918	Infineon Technologies AG	Trench and Field Stop IGBT4un RoHS: Compliant	10	100:$99.4400 25:$107.6700 10:$119.6300 1:$132.9199
FP50R12KT4GBOSA1 DISTI # FP50R12KT4GBOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 50A 35-pin ECONO3-3 - Trays (Alt: FP50R12KT4GBOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	100:$86.8900 60:$89.0900 40:$91.2900 20:$93.6900 10:$94.8900
FP50R12KT4GBOSA1 DISTI # SP000879284	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 50A 35-pin ECONO3-3 (Alt: SP000879284) RoHS: Compliant Min Qty: 1	Europe - 0	10:€78.9100 5:€87.8600 1:€89.5100
FP50R12KT4G DISTI # 641-FP50R12KT4G	Infineon Technologies AG	IGBT Modules IGBT Module 50A 1200V RoHS: Compliant	11	1:$115.5000 5:$113.3800 10:$108.2800 25:$104.6800 50:$104.6700
FP50R12KT4GBOSA1 DISTI # 2377260	Infineon Technologies AG	IGBT MODULE, NPN, 1.85V, 50A RoHS: Compliant	0	50:$160.9000 25:$160.9100 10:$166.4500 5:$174.2800 1:$177.5500
FP50R12KT4GBOSA1 DISTI # 2377260	Infineon Technologies AG	IGBT MODULE, NPN, 1.85V, 50A	0	10:£74.3600 5:£86.5100 1:£88.1300

Related products

Image	Part #	Description
	Mfr.#: FP50R12KE3G OMO.#: OMO-FP50R12KE3G-1190	New and Original
	Mfr.#: FP50R12KT4 OMO.#: OMO-FP50R12KT4-1190	Trans IGBT Module N-CH 1.2KV 50A 23-Pin ECONO 2
	Mfr.#: FP50R12KT4-B15 OMO.#: OMO-FP50R12KT4-B15-1190	New and Original
	Mfr.#: FP50R12KT4-B16-ENG OMO.#: OMO-FP50R12KT4-B16-ENG-1190	New and Original
	Mfr.#: FP50R12KT4GB15BOSA1 OMO.#: OMO-FP50R12KT4GB15BOSA1-INFINEON-TECHNOLOGIES	IGBT MODULE VCES 600V 50A
	Mfr.#: FP50R12KT4_B11ENG OMO.#: OMO-FP50R12KT4-B11ENG-1190	New and Original
	Mfr.#: FP50R12KT4GBOSA1 OMO.#: OMO-FP50R12KT4GBOSA1-INFINEON-TECHNOLOGIES	IGBT MODULE VCES 600V 50A
	Mfr.#: FP50R12KS4CBOSA1 OMO.#: OMO-FP50R12KS4CBOSA1-INFINEON-TECHNOLOGIES	IGBT MODULE VCES 600V 50A
	Mfr.#: FP50R12KT4PB11BPSA1 OMO.#: OMO-FP50R12KT4PB11BPSA1-INFINEON-TECHNOLOGIES	LOW POWER ECONO
	Mfr.#: FP50R12KT4PBPSA1 OMO.#: OMO-FP50R12KT4PBPSA1-INFINEON-TECHNOLOGIES	MOD IGBT LOW PWR ECONO2-4

Availability

Stock:: Available
On Order:: 4500
Enter Quantity:

Current price of FP50R12KT4GBOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$137.54~~; ~~$137.54~~

10: ~~$130.66~~; ~~$1 306.58~~

100: ~~$123.78~~; ~~$12 378.15~~

500: ~~$116.90~~; ~~$58 452.40~~

1000: ~~$110.03~~; ~~$110 028.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

FP50R12KT4G 6
FP50R12KT4 19
FP50R12KT 22
FP50R12K 28
FP50R1 29
FP50R 45
FP50 69
FP5 236

Newest Products

BCR601 - Linear LED IC with Active Headroom Contro

Infineon's BCR601 is a linear LED controller IC regulating the LED current with an external driver transistor.
BCR602 - Linear LED IC Controller

Infineon's BCR602 is a linear LED controller IC regulating the LED current by means of an external driver transistor.
600V Trench IGBTs

International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
800 V CoolMOS™ P7 Power Transistors

Infineon's 800 V CoolMOS™ P7 series set a benchmark in 800 V super junction technologies by combining best-in-class performance with state-of-the-art usability.
OptiMOS™-5 40 V MOSFETs in SS08

Infineon’s OptiMOS™-5 40 V in SS08 is the little MOSFET that enables big current.

More Newest Products

FP50R12KT4GBOSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes