FP50R12KT4G

FP50R12KT4G vs FP50R12KT4GB15BOSA1 vs FP50R12KT4GBOSA1

 
PartNumberFP50R12KT4GFP50R12KT4GB15BOSA1FP50R12KT4GBOSA1
DescriptionIGBT Modules IGBT Module 50A 1200VIGBT MODULE VCES 600V 50AIGBT MODULE VCES 600V 50A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
Configuration3-Phase--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.25 V--
Continuous Collector Current at 25 C50 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation280 W--
Package / CaseEcono 3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFP50R12KT4GBOSA1 SP000879284--
Unit Weight10.582189 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FP50R12KT4G_B15 IGBT Modules IGBT Module 50A 1200V
FP50R12KT4G IGBT Modules IGBT Module 50A 1200V
FP50R12KT4GB15BOSA1 IGBT MODULE VCES 600V 50A
FP50R12KT4GBOSA1 IGBT MODULE VCES 600V 50A
FP50R12KT4G-B15 New and Original
FP50R12KT4G_B11 New and Original
FP50R12KT4G IGBT Modules IGBT Module 50A 1200V
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