PartNumber | FP50R12KT4G | FP50R12KT4GB15BOSA1 | FP50R12KT4GBOSA1 |
Description | IGBT Modules IGBT Module 50A 1200V | IGBT MODULE VCES 600V 50A | IGBT MODULE VCES 600V 50A |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | 3-Phase | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.25 V | - | - |
Continuous Collector Current at 25 C | 50 A | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Pd Power Dissipation | 280 W | - | - |
Package / Case | Econo 3 | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FP50R12KT4GBOSA1 SP000879284 | - | - |
Unit Weight | 10.582189 oz | - | - |