FQA10N8

FQA10N80C-F109 vs FQA10N80 vs FQA10N80C

 
PartNumberFQA10N80C-F109FQA10N80FQA10N80C
DescriptionMOSFET 800V N-Ch QFET AdvanceMOSFET 800V N-Channel QFETMOSFET N-CH 800V 10A TO-3P
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3TO-3PN-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current10 A9.8 A-
Rds On Drain Source Resistance1.1 Ohms1.05 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation240 W240 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height20.1 mm20.1 mm-
Length16.2 mm16.2 mm-
SeriesFQA10N80C_F109--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time80 ns75 ns-
Product TypeMOSFETMOSFET-
Rise Time130 ns115 ns-
Factory Pack Quantity45030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time90 ns125 ns-
Typical Turn On Delay Time50 ns45 ns-
Part # AliasesFQA10N80C_F109FQA10N80_NL-
Unit Weight0.225789 oz0.000198 oz-
Type-MOSFET-
Forward Transconductance Min-10 S-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA10N80C-F109 MOSFET 800V N-Ch QFET Advance
FQA10N80 MOSFET 800V N-Channel QFET
ON Semiconductor
ON Semiconductor
FQA10N80 MOSFET N-CH 800V 9.8A TO-3P
FQA10N80C MOSFET N-CH 800V 10A TO-3P
FQA10N80C-F109 MOSFET N-CH 800V 10A TO-3P
FQA10N80_F109 MOSFET N-CH 800V 9.8A TO-3P
FQA10N80,FQA10N80C New and Original
FQA10N80A New and Original
FQA10N80C,10N80C, New and Original
FQA10N80C,FQA13N50C,10N8 New and Original
FQA10N80C_F109 Darlington Transistors MOSFET 800V N-Ch QFET Advance
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