 | |
| PartNumber | FQA10N80C-F109 |
| Description | MOSFET 800V N-Ch QFET Advance |
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V |
| Id Continuous Drain Current | 10 A |
| Rds On Drain Source Resistance | 1.1 Ohms |
| Vgs Gate Source Voltage | 30 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 240 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | QFET |
| Packaging | Tube |
| Height | 20.1 mm |
| Length | 16.2 mm |
| Series | FQA10N80C_F109 |
| Transistor Type | 1 N-Channel |
| Width | 5 mm |
| Brand | ON Semiconductor / Fairchild |
| Fall Time | 80 ns |
| Product Type | MOSFET |
| Rise Time | 130 ns |
| Factory Pack Quantity | 450 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 90 ns |
| Typical Turn On Delay Time | 50 ns |
| Part # Aliases | FQA10N80C_F109 |
| Unit Weight | 0.225789 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQA10N80C-F109 | MOSFET 800V N-Ch QFET Advance | |
ON Semiconductor |
FQA10N80C-F109 | MOSFET N-CH 800V 10A TO-3P |